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  1. Quantum interference effects in resonant Raman spectroscopy of MoTe2 from first principles, Henrique P. C. Miranda, Sven Reichardt, Guillaume Froehlicher, Alejandro Molina-Sánchez, Stéphane Berciaud, and Ludger Wirtz (submitted).

  2. Excitons in boron nitride single layer, Thomas Galvani, Fulvio Paleari, Henrique P. C. Miranda, Alejandro Molina-Sánchez, Ludger Wirtz, Sylvain Latil, Hakim Amara, and François Ducastelle, Physical Review B 94, 125303 (2016).

  3. Temperature-dependent excitonic effects in the optical properties of single-layer MoS2, A. Molina-Sánchez, M. Palummo, A. Marini, and L. Wirtz, Physical Review B 93, 155435 (2016).

  4. A unified description of the optical phonon modes in N-layer MoTe2, G. Froehlicher, E. Lorchat, F. Fernique, C. Joshi, A. Molina-Sánchez, L. Wirtz, S. Berciaud, Nano Letters 15 6481 (2015).

  5. Vibrational and optical properties of MoS2: from monolayer to bulk, A. Molina-Sánchez, K. Hummer, and L. Wirtz, Review in Surface Science Reports, 70, 554 (2015).

  6. Au-nanoparticle size dependent Fermi energy in catalyst growth InAs nanowires, M. Möller, D. S. de Oliveira, M. A. Cotta, P. K. Sahoo, F. Iikawa, P. Motisuke, A. Molina-Sánchez, A. García-Cristóbal, M. M. de Lima, and A. Cantarero, (to be published).

  7. Excitons in a mirror: Formation of optical MoS2 bilayers using MoS2 monolayers and gold substrates, J. Mertens, Y. Shi, H. Y. Yang, A. Molina-Sánchez, L. Wirtz, J. J. Baumberg, Applied Physics Letters 104, 191105 (2014).

  8. Moiré-induced replica of graphene phonons on Ir(111), M. Endlich, H. Miranda, A. Molina-Sánchez, L. Wirtz, J. Kröger, Annalen der Physik 526, 372 (2014).

  9. Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride, F. Forster, A. Molina-Sánchez, S. Engels, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, and C. Stampfer, Physical Review B 88, 085419 (2013).

  10. Screening of electron-phonon coupling in graphene on Ir(111), M. Endlich, A. Molina-Sánchez, L. Wirtz, and J. Kröger, Physical Review B 88, 205403 (2013).

  11. Ab-initio study of the excitonic effects on the optical spectra of single-layer, double- layer, and bulk MoS2, A Molina-Sánchez, D Sangalli, K Hummer, A Marini, L Wirtz, Physical Review B 88, 045412 (2013).

  12. The contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001), F. Fromm, M. H. Oliveira Jr., A. Molina-Sánchez, M. Hundhausen, J. M. Lopes, H. Riechert, L. Wirtz, and Th. Seyller, New Journal of Physics 15, 043031 (2013).

  13. Probing Quantum Confinement within Single Core-Multishell Nanowires, G. Martinez- Criado, A. Homs, B. Alen, J. A. Sans, J. Segura-Ruiz, A. Molina-Sánchez, J. Susini, J. Yoo, and G.-C. Yi. Nano Letters 12, 5829 (2012).

  14. Semiempirical pseudopotential approach for nitride-based nanostructures and ab initio based passivation of free surfaces, A. Molina-Sánchez, A. García-Cristóbal, and G. Bester. Physical Review B 86 205430 (2012).

  15. Anisotropic optical response of GaN and AlN nanowires, A. Molina-Sánchez and A. García-Cristóbal. Journal of Physics: Condensed Matter 24, 295301 (2012).

  16. Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties, A. Molina-Sánchez, J. Segura-Ruiz, N. Garro, A. García-Cristóbal, A. Cantarero, F. Iikawa, C. Denker, J. Malindretos, and A. Rizzi. Physica Status Solidi C 9, 1001 (2012).

  17. Phonons in single-layer and few-layer MoS2 and WS2, A. Molina-Sánchez and L. WirAtomistic modeling of III-V nanowires: study of the anisotropy in the optical responsetz. Physical Review B 84 155413 (2011).

  18. LDA+U and tight-binding electronic structure of InN nanowires, A. Molina-Sánchez, A. García-Cristóbal, A. Cantarero, A. Terentjevs, and G. Cicero. Physical Review B, 82 165324 (2010).

  19. Inhomogeneous free electron distribution in InN nanowires: photoluminescence experiments, J. Segura-Ruiz, A. Molina-Sánchez, N. Garro, A. García-Cristóbal, A. Cantarero, F. Iikawa, C. Denker, J. Malindretos, and A. Rizzi. Physical Review B, 82 125319 (2010).

  20. Reversed Polarized emission in highly strained a-plane GaN/AlN multiple quantum wells, R. Mata, A. Cros, J. A. Budagosky, A. Molina-Sánchez, N. Garro, A. García- Cristóbal, J. Renard, S. Founta, B. Gayral, E. Bellet-Amalric, C. Bougerol, and B. Daudin. Physical Review B, 82, 125405 (2010).

  21. Tight-binding study of the optical properties of GaN/AlN polar and non polar quantum wells, A. Molina, A. García-Cristóbal, and A. Cantarero. Microelectronics Journal 40, 418 (2009).